Global and China Semiconductor Devices for High Temperature Market Insights, Forecast to 2027

SKU ID : QYR-19273347 | Publishing Date : 05-Oct-2021 | No. of pages : 141

Semiconductor Devices for High Temperature have long been used in aerospace, oil and gas operations. Only when a high temperature device is used as a driving device of a silicon carbide switch, its high temperature resistance characteristics can be brought into play, which can reduce or even eliminate the need for a cooling system. It has the effect of slowing down the aging of the device and increasing the working life.
As the temperature increases, due to the thermal effect of electron-hole pairs, the intrinsic carrier concentration of the silicon base is constantly increasing, and the most important doped carrier concentration of the semiconductor junction is resisted. Performance continues to degrade. Semiconductor junctions based on silicon do not work by themselves at high temperatures.

Market Analysis and Insights: Global and China Semiconductor Devices for High Temperature Market
This report focuses on global and China Semiconductor Devices for High Temperature market.
In 2020, the global Semiconductor Devices for High Temperature market size was US$ XX million and it is expected to reach US$ XX million by the end of 2027, with a CAGR of XX% during 2021-2027. In China the Semiconductor Devices for High Temperature market size is expected to grow from US$ XX million in 2020 to US$ XX million by 2027, at a CAGR of XX% during the forecast period.

Global Semiconductor Devices for High Temperature Scope and Market Size
Semiconductor Devices for High Temperature market is segmented by region (country), players, by Type, and by Application. Players, stakeholders, and other participants in the global Semiconductor Devices for High Temperature market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by region (country), by Type and by Application in terms of revenue and forecast for the period 2016-2027.
For China market, this report focuses on the Semiconductor Devices for High Temperature market size by players, by Type, and by Application, for the period 2016-2027. The key players include the global and local players which play important roles in China.

Segment by Type
Gallium Nitride (GaN)
Silicon Carbide (SiC)
Gallium Arsenide (GaAs)
Diamond Semiconductor

Segment by Application
Defense & Aerospace
Information & Communication Technology
Healthcare
Steel & Energy
Electronics & Electrical
Others

By Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE

By Company
Cree Inc.
Fujitsu Ltd.
Gan Systems Inc.
General Electric
GeneSiC Semiconductor
Infineon Technologies
NXP Semiconductors
Qorvo
Renesas Electronics
Texas Instruments
Toshiba
Allegro Microsystems Llc
SMART Modular Technologies

Frequently Asked Questions

This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
  • By product type
  • By End User/Applications
  • By Technology
  • By Region
The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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