Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

Market Analysis and Insights: Global Ferro-electric Random Access Memory Market
The global Ferro-electric Random Access Memory market was valued at US$ XX in 2020 and will reach US$ XX million by the end of 2027, growing at a CAGR of XX% during 2022-2027.

Global Ferro-electric Random Access Memory Scope and Market Size
The global Ferro-electric Random Access Memory market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global Ferro-electric Random Access Memory market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2016-2027.

Segment by Type
Serial Memory
Parallel Memory

Segment by Application
Smart Meters
Automotive Electronics
Medical Devices
Wearable Devices

The Ferro-electric Random Access Memory market is analysed and market size information is provided by regions (countries). Segment by Application, the Ferro-electric Random Access Memory market is segmented into North America, Europe, China, Japan, Southeast Asia, India and Other Regions.

By Company
Ramtron
Fujistu
TI
IBM
Infineon