GaN Power Device Market Size, Share, Growth | Global Industry Research Report, 2026
SKU ID : FBUIN-15701135 | Publishing Date : 08-Apr-2020
Global GaN Power Device Market Market Research report presents an in-depth analysis of the GaN Power Device market size, growth, share, segments, manufacturers, and forecast, competition landscape and growth opportunity. This report also focuses on key trends, market drivers, challenges, standardization, deployment models, future road-map, revenue and forecast analysis. Moreover, this research report categorizes the global GaN Power Device market by companies, region, type and end-user industry
GaN Power Device market size is valued to hit million US$ From xx million US$ in 2014-2017, with a CAGR of xx.x% during forecast period.
Key Players Covered:
Microsemi Corporation (The U.S.), Analog Devices, Inc. (The U.S.), Cree, Inc. (The U.S.), Qorvo, Inc. (The U.S.), MACOM Technology Solutions (The U.S.), Efficient Power Conversion Corporation (The U.S.), Integra Technologies, Inc. (The U.S.), Transphorm Inc. (The U.S.), Navitas Semiconductor Inc. (The U.S.), NXP Semiconductors N.V. (The Netherland), Texas Instruments, Inc (The U.S.), Infineon Technologies AG (Germany), On Semiconductor Corporation (The U.S.), Texas Instruments, Inc (The U.S.) and among others.
Moreover, GaN Power Device market research report also providing a comprehensive overview of the markets between 2014-2017. The report offers an in-depth summary of the current market status, historic, and expected way forward for the global GaN Power Device market. additionally, to this, the report provides data on the restraints negatively impacting the market’s growth. The report includes valuable information to assist new entrants, as well as established players, to understand the prevailing trends in the Market.
GaN Power Device Market Segmentation:
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
By Voltage Range
Low Voltage (Below 200 Volt)
Medium Voltage (200–600 Volt)
High Voltage (Above 600 Volt)
Power Drives
Supply and Inverter
Radio Frequency
By End User
Commercial
Military
Global
In this study, the years considered to estimate the market size of GaN Power Device are as follows:
2018
What is the market size and growth rate of the global and regional market by various segment?
What is the market size and growth rate of the market for selective countries?
Which region or sub-segment is expected to drive the market in the forecast period?
What factors are estimated to drive and restrain the market growth?
What are the key technologies and market trends shaping the market?
What are the key opportunities in the market?
What are the key companies operating in the market?
Which company accounted for the highest market growth?
GaN Power Device market size is valued to hit million US$ From xx million US$ in 2014-2017, with a CAGR of xx.x% during forecast period.
Key Players Covered:
Microsemi Corporation (The U.S.), Analog Devices, Inc. (The U.S.), Cree, Inc. (The U.S.), Qorvo, Inc. (The U.S.), MACOM Technology Solutions (The U.S.), Efficient Power Conversion Corporation (The U.S.), Integra Technologies, Inc. (The U.S.), Transphorm Inc. (The U.S.), Navitas Semiconductor Inc. (The U.S.), NXP Semiconductors N.V. (The Netherland), Texas Instruments, Inc (The U.S.), Infineon Technologies AG (Germany), On Semiconductor Corporation (The U.S.), Texas Instruments, Inc (The U.S.) and among others.
Moreover, GaN Power Device market research report also providing a comprehensive overview of the markets between 2014-2017. The report offers an in-depth summary of the current market status, historic, and expected way forward for the global GaN Power Device market. additionally, to this, the report provides data on the restraints negatively impacting the market’s growth. The report includes valuable information to assist new entrants, as well as established players, to understand the prevailing trends in the Market.
GaN Power Device Market Segmentation:
By Type
GaN Power Discrete Devices
GaN Power ICs
GaN Power Modules
By Voltage Range
Low Voltage (Below 200 Volt)
Medium Voltage (200–600 Volt)
High Voltage (Above 600 Volt)
By Application
Power Drives
Supply and Inverter
Radio Frequency
By End User
Commercial
Military
Key Regions
split in this report: breakdown data for each region.Global
In this study, the years considered to estimate the market size of GaN Power Device are as follows:
Base Year:
2018Forecast Year:
2014-2017Key Questions Answered:
What is the market size and growth rate of the global and regional market by various segment?
What is the market size and growth rate of the market for selective countries?
Which region or sub-segment is expected to drive the market in the forecast period?
What factors are estimated to drive and restrain the market growth?
What are the key technologies and market trends shaping the market?
What are the key opportunities in the market?
What are the key companies operating in the market?
Which company accounted for the highest market growth?
Frequently Asked Questions
This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
- By product type
- By End User/Applications
- By Technology
- By Region
The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.