Global Avalanche Photo Diode Market Outlook 2022

SKU ID : QYR-19860536 | Publishing Date : 06-Jan-2022 | No. of pages : 107

The Avalanche Photo Diode industry can be broken down into several segments, Si-APD, InGaAs-APD, Others, etc.
Across the world, the major players cover First-sensor, Hamamatsu, Kyosemi Corporation, Luna, Excelitas, Osi optoelectronics, Edmund Optics, GCS, Accelink, NORINCO GROUP, etc.
Avalanche Photo Diode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage, the higher the gain.
Avalanche Photo Diode (APD) applicability and usefulness depends on many parameters. Two of the larger factors are: quantum efficiency, which indicates how well incident optical photons are absorbed and then used to generate primary charge carriers; and total leakage current, which is the sum of the dark current and photocurrent and noise. Electronic dark noise components are series and parallel noise. Series noise, which is the effect of shot noise, is basically proportional to the APD capacitance while the parallel noise is associated with the fluctuations of the APD bulk and surface dark currents. Another noise source is the excess noise factor, ENF. It describes the statistical noise that is inherent with the stochastic APD multiplication process. This is not to be confused with the fano noise (F), which describes the fluctuation of the total electric charge collected in the APD.
First-sensor and Hamamatsu are the biggest two players in Avalanche Photo Diode market. Other enterprises including Kyosemi, Excelitas, Osi optoelectronics, GCS, Accelink, and NORINCO GROUP, etc. First-sensor and Hamamatsu are the biggest two players in Avalanche Photo Diode market, with about 20% and 16% market share (revenue) separately in 2019.
Production Locations of these leading brands mainly distributed in Japan, USA, and European.
There are two types of avalanche photo diode, one is Si-APD, the other is InGaAs-APD.
As for application, avalanche photo diode can be used in industrial, medical and mobility. Industry accounted for about 44% of the market share in 2019.

Market Analysis and Insights: Global Avalanche Photo Diode Market
The global Avalanche Photo Diode market was valued at US$ 125.2 million in 2020 and it is expected to reach US$ 210.1 million by the end of 2027, growing at a CAGR of 7.7% during 2021-2027.

Global Avalanche Photo Diode Market: Drivers and Restrains
The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2016 to 2027. This section mentions the volume of production by region from 2016 to 2027. Pricing analysis is included in the report according to each type from the year 2016 to 2027, manufacturer from 2016 to 2021, region from 2016 to 2021, and global price from 2016 to 2027.
A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.

Global Avalanche Photo Diode Market: Segment Analysis
The research report includes specific segments by region (country), by manufacturers, by Type and by Application. Each type provides information about the production during the forecast period of 2016 to 2027. by Application segment also provides consumption during the forecast period of 2016 to 2027. Understanding the segments helps in identifying the importance of different factors that aid the market growth.

Segment by Type
Si-APD
InGaAs-APD
Others

Segment by Application
Industrial
Medical
Mobility
Others

By Company
First-sensor
Hamamatsu
Kyosemi Corporation
Excelitas
Osi optoelectronics
GCS
Accelink
NORINCO GROUP

Production by Region
North America
Europe
China
Japan
China Taiwan

Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE

Frequently Asked Questions

This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
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The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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