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Global GaN Field-Effect Transistor (FET) Drivers Market Growth 2022-2028
SKU ID : LPI-21512051 | Publishing Date : 22-Aug-2022 | No. of pages : 90
The global market for GaN Field-Effect Transistor (FET) Drivers is estimated to increase from US$ million in 2021 to reach US$ million by 2028, exhibiting a CAGR of % during 2022-2028. Keeping in mind the uncertainties of COVID-19 and Russia-Ukraine War, we are continuously tracking and evaluating the direct as well as the indirect influence of the pandemic on different end use sectors. These insights are included in the report as a major market contributor.
The APAC GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The United States GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The Europe GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The China GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
Global key GaN Field-Effect Transistor (FET) Drivers players cover PSemi, Nexperia, Texas Instruments, STMicroelectronics and Renesas Electronics Corporation, etc. In terms of revenue, the global largest two companies occupy a share nearly % in 2021.
Report Coverage
This latest report provides a deep insight into the global GaN Field-Effect Transistor (FET) Drivers market covering all its essential aspects. This ranges from a macro overview of the market to micro details of the market size, competitive landscape, development trend, niche market, key market drivers and challenges, value chain analysis, etc.
This report aims to provide a comprehensive picture of the global GaN Field-Effect Transistor (FET) Drivers market, with both quantitative and qualitative data, to help readers understand how the GaN Field-Effect Transistor (FET) Drivers market scenario changed across the globe during the pandemic and Russia-Ukraine War.
The base year considered for analyses is 2021, while the market estimates and forecasts are given from 2022 to 2028. The market estimates are provided in terms of revenue in USD millions and volume in K Units.
Market Segmentation:
The study segments the GaN Field-Effect Transistor (FET) Drivers market and forecasts the market size by Type (Harf-Bridge Board Type and Full-Bridge Board Type,), by Application (Automobile, Industrial and Other,), and region (APAC, Americas, Europe, and Middle East & Africa).
Segmentation by type
Harf-Bridge Board Type
Full-Bridge Board Type
Segmentation by application
Automobile
Industrial
Other
Segmentation by region
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
Major companies covered
PSemi
Nexperia
Texas Instruments
STMicroelectronics
Renesas Electronics Corporation
Efficient Power Conversion Corporation
Monolithic Power Systems, Inc
Chapter Introduction
Chapter 1: Scope of GaN Field-Effect Transistor (FET) Drivers, Research Methodology, etc.
Chapter 2: Executive Summary, global GaN Field-Effect Transistor (FET) Drivers market size (sales and revenue) and CAGR, GaN Field-Effect Transistor (FET) Drivers market size by region, by type, by application, historical data from 2017 to 2022, and forecast to 2028.
Chapter 3: GaN Field-Effect Transistor (FET) Drivers sales, revenue, average price, global market share, and industry ranking by company, 2017-2022
Chapter 4: Global GaN Field-Effect Transistor (FET) Drivers sales and revenue by region and by country. Country specific data and market value analysis for the U.S., Canada, Europe, China, Japan, South Korea, Southeast Asia, India, Latin America and Middle East & Africa.
Chapter 5, 6, 7, 8: Americas, APAC, Europe, Middle East & Africa, sales segment by country, by type, and type.
Chapter 9: Analysis of the current market trends, market forecast, opportunities and economic trends that are affecting the future marketplace
Chapter 10: Manufacturing cost structure analysis
Chapter 11: Sales channel, distributors, and customers
Chapter 12: Global GaN Field-Effect Transistor (FET) Drivers market size forecast by region, by country, by type, and application.
Chapter 13: Comprehensive company profiles of the leading players, including PSemi, Nexperia, Texas Instruments, STMicroelectronics, Renesas Electronics Corporation, Efficient Power Conversion Corporation and Monolithic Power Systems, Inc, etc.
Chapter 14: Research Findings and Conclusion
The APAC GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The United States GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The Europe GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
The China GaN Field-Effect Transistor (FET) Drivers market is expected at value of US$ million in 2022 and grow at approximately % CAGR during 2022 and 2028.
Global key GaN Field-Effect Transistor (FET) Drivers players cover PSemi, Nexperia, Texas Instruments, STMicroelectronics and Renesas Electronics Corporation, etc. In terms of revenue, the global largest two companies occupy a share nearly % in 2021.
Report Coverage
This latest report provides a deep insight into the global GaN Field-Effect Transistor (FET) Drivers market covering all its essential aspects. This ranges from a macro overview of the market to micro details of the market size, competitive landscape, development trend, niche market, key market drivers and challenges, value chain analysis, etc.
This report aims to provide a comprehensive picture of the global GaN Field-Effect Transistor (FET) Drivers market, with both quantitative and qualitative data, to help readers understand how the GaN Field-Effect Transistor (FET) Drivers market scenario changed across the globe during the pandemic and Russia-Ukraine War.
The base year considered for analyses is 2021, while the market estimates and forecasts are given from 2022 to 2028. The market estimates are provided in terms of revenue in USD millions and volume in K Units.
Market Segmentation:
The study segments the GaN Field-Effect Transistor (FET) Drivers market and forecasts the market size by Type (Harf-Bridge Board Type and Full-Bridge Board Type,), by Application (Automobile, Industrial and Other,), and region (APAC, Americas, Europe, and Middle East & Africa).
Segmentation by type
Harf-Bridge Board Type
Full-Bridge Board Type
Segmentation by application
Automobile
Industrial
Other
Segmentation by region
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
Major companies covered
PSemi
Nexperia
Texas Instruments
STMicroelectronics
Renesas Electronics Corporation
Efficient Power Conversion Corporation
Monolithic Power Systems, Inc
Chapter Introduction
Chapter 1: Scope of GaN Field-Effect Transistor (FET) Drivers, Research Methodology, etc.
Chapter 2: Executive Summary, global GaN Field-Effect Transistor (FET) Drivers market size (sales and revenue) and CAGR, GaN Field-Effect Transistor (FET) Drivers market size by region, by type, by application, historical data from 2017 to 2022, and forecast to 2028.
Chapter 3: GaN Field-Effect Transistor (FET) Drivers sales, revenue, average price, global market share, and industry ranking by company, 2017-2022
Chapter 4: Global GaN Field-Effect Transistor (FET) Drivers sales and revenue by region and by country. Country specific data and market value analysis for the U.S., Canada, Europe, China, Japan, South Korea, Southeast Asia, India, Latin America and Middle East & Africa.
Chapter 5, 6, 7, 8: Americas, APAC, Europe, Middle East & Africa, sales segment by country, by type, and type.
Chapter 9: Analysis of the current market trends, market forecast, opportunities and economic trends that are affecting the future marketplace
Chapter 10: Manufacturing cost structure analysis
Chapter 11: Sales channel, distributors, and customers
Chapter 12: Global GaN Field-Effect Transistor (FET) Drivers market size forecast by region, by country, by type, and application.
Chapter 13: Comprehensive company profiles of the leading players, including PSemi, Nexperia, Texas Instruments, STMicroelectronics, Renesas Electronics Corporation, Efficient Power Conversion Corporation and Monolithic Power Systems, Inc, etc.
Chapter 14: Research Findings and Conclusion
Frequently Asked Questions
This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.
- By product type
- By End User/Applications
- By Technology
- By Region
The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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