Global GaN Power Devices Market Report, History and Forecast 2015-2026, Breakdown Data by Manufacturers, Key Regions, Types and Application

GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.

Market Analysis and Insights: Global GaN Power Devices Market
The global GaN Power Devices market size is projected to reach US$ XX million by 2026, from US$ XX million in 2020, at a CAGR of XX% during 2021-2026.
Global GaN Power Devices Scope and Segment
The global GaN Power Devices market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN Power Devices market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by region (country), by Type, and by Application for the period 2015-2026.
The major regions covered in the report are North America, Europe, Asia-Pacific, South America, Middle East & Africa, etc. The report has specifically covered major countries including U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, India, Australia, Taiwan, Indonesia, Thailand, Malaysia, Philippines, Vietnam, Mexico, Brazil, Turkey, Saudi Arabia, U.A.E, etc. It includes revenue and volume analysis of each region and their respective countries for the forecast years. It also contains country-wise volume and revenue from the year 2015 to 2020. Additionally, it provides the reader with accurate data on volume sales according to the consumption for the same years.

Segment by Type, the GaN Power Devices market is segmented into
600V
Other

Segment by Application, the GaN Power Devices market is segmented into
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices

GaN Power Devices market competitive landscape provides details and data information by players. The report offers comprehensive analysis and accurate statistics on revenue by the player for the period 2015-2020. It also offers detailed analysis supported by reliable statistics on revenue (global and regional level) by players for the period 2015-2020. Details included are company description, major business, company total revenue and the sales, revenue generated in GaN Power Devices business, the date to enter into the GaN Power Devices market, GaN Power Devices product introduction, recent developments, etc.
The major vendors covered:
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors

Geographic Segmentation
The report offers exhaustive assessment of different region-wise and country-wise GaN Power Devices markets such as U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, India, Australia, Taiwan, Indonesia, Thailand, Malaysia, Philippines, Vietnam, Mexico, Brazil, Turkey, Saudi Arabia, U.A.E, etc. Key regions covered in the report are North America, Europe, Asia-Pacific, Latin America, and the Middle East and Africa.
For the period 2015-2026, the report provides country-wise revenue and volume sales analysis and region-wise revenue and volume analysis of the global GaN Power Devices market. For the period 2015-2020, it provides sales (consumption) analysis and forecast of different regional markets by Application as well as by Type in terms of volume.