Global GaN Semiconductor Devices Market Insights and Forecast to 2026

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.
The global gallium nitride semiconductor device market for opto-semiconductor device type held the largest market share. This is attributed to its wide application in consumer and enterprise, industrial, and automotive industry. Gallium nitride light-emitting diodes (LEDs) are widely used in laptop and notebook display, mobile display, projectors, televisions and monitor, signs and large displays, etc. Gallium nitride LEDs are also used for the interior and exterior lighting in the automotive industry such as headlights and signal lights, car interior lighting, fog lights, stop lights, and dome lights, etc.

Market Analysis and Insights: Global GaN Semiconductor Devices Market
The global GaN Semiconductor Devices market size is projected to reach US$ 14960 million by 2026, from US$ 14390 million in 2020, at a CAGR of 3.7%% during 2021-2026.

Global GaN Semiconductor Devices Scope and Segment
GaN Semiconductor Devices market is segmented by Type, and by Application. Players, stakeholders, and other participants in the global GaN Semiconductor Devices market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2015-2026.

Segment by Type, the GaN Semiconductor Devices market is segmented into
Opto Semiconductor
Power Semiconductor
RF Semiconductor

Segment by Application, the GaN Semiconductor Devices market is segmented into
Telecommunication
Industrial
Automotive
Consumer Electronics
Military, Defense, and Aerospace
Medical
Other

Regional and Country-level Analysis
The GaN Semiconductor Devices market is analysed and market size information is provided by regions (countries).
The key regions covered in the GaN Semiconductor Devices market report are North America, Europe, China, Japan and South Korea. It also covers key regions (countries), viz, the U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, India, Australia, Taiwan, Indonesia, Thailand, Malaysia, Philippines, Vietnam, Mexico, Brazil, Turkey, Saudi Arabia, U.A.E, etc.
The report includes country-wise and region-wise market size for the period 2015-2026. It also includes market size and forecast by Type, and by Application segment in terms of production capacity, price and revenue for the period 2015-2026.

Competitive Landscape

and GaN Semiconductor Devices Market Share Analysis

GaN Semiconductor Devices market competitive landscape provides details and data information by manufacturers. The report offers comprehensive analysis and accurate statistics on production capacity, price, revenue of GaN Semiconductor Devices by the player for the period 2015-2020. It also offers detailed analysis supported by reliable statistics on production, revenue (global and regional level) by players for the period 2015-2020. Details included are company description, major business, company total revenue, and the production capacity, price, revenue generated in GaN Semiconductor Devices business, the date to enter into the GaN Semiconductor Devices market, GaN Semiconductor Devices product introduction, recent developments, etc.
The major vendors covered:
Cree
Infineon
Qorvo
Macom
Microchip Technology
Mitsubishi Electric
Efficient Power Conversion (EPC)
GaN Systems
Nichia
Epistar
Transphorm
Visic Technologies
Analog Devices
Texas Instruments
Sumitomo Electric
Samsung
Northrop Grumman Corporation
Integra Technologies
Navitas Semiconductor
Panasonic
Ampleon
Powdec
Dialog Semiconductor