Global Silicon Carbide (SiC) Power Devices Market Research Report 2022

A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
Market Analysis and Insights: Global Silicon Carbide (SiC) Power Devices Market
Due to the COVID-19 pandemic, the global Silicon Carbide (SiC) Power Devices market size is estimated to be worth US$ million in 2022 and is forecast to a readjusted size of US$ million by 2028 with a CAGR of % during the forecast period 2022-2028. Fully considering the economic change by this health crisis, Diodes accounting for % of the Silicon Carbide (SiC) Power Devices global market in 2021, is projected to value US$ million by 2028, growing at a revised % CAGR from 2022 to 2028. While EV/HEVs segment is altered to an % CAGR throughout this forecast period.
The UPS & PS application segment accounted for the largest silicon carbide power devices market share during 2017. The utilization of SiC power devices in UPS & PS applications will increase in the coming years and the segment will account for the major share of this market till 2023.
Global Silicon Carbide (SiC) Power Devices Market: Drivers and Restrains
The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2017 to 2028. This section mentions the volume of production by region from 2017 to 2028. Pricing analysis is included in the report according to each type from the year 2017 to 2028, manufacturer from 2017 to 2022, region from 2017 to 2022, and global price from 2017 to 2028.
A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.
Global Silicon Carbide (SiC) Power Devices Market: Segment Analysis
The research report includes specific segments by region (country), by manufacturers, by Type and by Application. Each type provides information about the production during the forecast period of 2017 to 2028. by Application segment also provides consumption during the forecast period of 2017 to 2028. Understanding the segments helps in identifying the importance of different factors that aid the market growth.
Segment by Type
Diodes
Modules
Transistors
Other
Segment by Application
EV/HEVs
PV Inverters
UPS & PS
Other
By Company
Infineon Technologies
Cree
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
Toshiba
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina